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| Ordering number:ENN2854 NPN Triple Diffused Planar Silicon Transistor 2SC4423 400V/12A Switching Regulator Applications Features * High breakdown voltage, high reliability. * Fast switching speed (tf : 0.1s typ). * Wide ASO. * Adoption of MBIT process. * Micaless package facilitating easy mounting. Package Dimensions unit:mm 2039D [2SC4423] 3.4 16.0 5.0 8.0 5.6 3.1 21.0 22.0 20.4 2.8 2.0 1.0 4.0 2.0 0.6 1 2 3 3.5 Specifications Absolute Maximum Ratings at Ta = 25C Parameter Collector-to-Base Voltage Collector-to-Emitter Voltage Emitter-to-Base Voltage Collector Current Collector Current (Pulse) Base Current Collector Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC ICP IB PC Tj Tstg Tc=25C PW300s, duty cycle10% 5.45 5.45 1 : Base 2 : Collector 3 : Emitter SANYO : TO-3PML Conditions Ratings 500 400 7 12 25 4 3 55 150 -55 to +150 2.0 Unit V V V A A A W W C C Electrical Characteristics at Ta = 25C Parameter Collector Cutoff Current Emitter Cutoff Current Symbol ICBO IEBO VCB=400V, IE=0 VEB=5V, IC=0 Conditions Ratings min typ max 10 10 Unit A A Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 13004TN (KT)/D1898HA (KT)/9288MO, TS No.2854-1/4 2SC4423 Continued from preceding page. Parameter Symbol hFE1* DC Current Gain Collector-to-Emitter Saturation Voltage Base-to-Emitter Saturation Voltage Gain-Bandwidth Product Output Capacitance Collector-to-Base Breakdown Voltage Collector-to-Emitter Breakdown Voltage Emitter-to-Base Breakdown Voltage Collector-to-Emitter Sustain Voltage Turn-ON Time Storage Time Fall Time hFE2 hFE3 VCE(sat) VBE(sat) fT VCE=5V, IC=1.6A VCE=5V, IC=8A VCE=5V, IC=10mA IC=8A, IB=1.6A IC=8A, IB=1.6A VCE=10V, IC=1.6A 500 400 7 400 0.5 2.5 0.3 20 160 Conditions Ratings min 15 10 10 0.8 1.5 V V MHz pF V V V V s s s typ max 50 Unit Cob VCB=10V, f=1MHz V(BR)CBO IC=1mA, IE=0 V(BR)CEO IC=5mA, RBE= V(BR)EBO IE=1mA, IC=0 VCEX(sus) IC=6A, IB1=0.6A, IB2=-2.4A, L=500H, Clamped ton IC=10A, IB1=2A, IB2=-4A, RL=20, VCC=200V tstg tf IC=10A, IB1=2A, IB2=-4A, RL=20, VCC=200V IC=10A, IB1=2A, IB2=-4A, RL=20, VCC=200V * : The hFE1 of the 2SC4423 is classified as follows. When specifying the hFE1 rank, specify two ranks or more in principle. Rank hFE L 15 to 30 M 20 to 40 N 30 to 50 Switching Time Test Circuit PW=20s D.C.1% IB1 IB2 RB VR 50 + 100F VBE= --5V 20 OUTPUT RL + 470F VCC=200V 14 INPUT IC -- VCE 2000mA 1800mA 1600mA 1400mA 1200mA 1000mA 800mA 600mA IC -- VBE(on) VCE=5V 12 Collector Current, IC - A Collector Current, IC - A 16 10 12 8 8 400mA 200mA 6 4 4 2 0 0 2 4 6 IB=0 8 10 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 Collector-to-Emitter Voltage, VCE - V ITR06810 2 Base-to-Emitter ON Voltage, VBE(on) - V ITR06811 3 hFE -- IC VCE=5V VCE(sat) -- IC IC / IB=5 2 100 7 Collector-to-Emitter Saturation Voltage, VCE (sat) - V 1.0 7 5 3 2 DC Current Gain, hFE 5 3 2 Ta=120C 25C --40C 10 7 5 3 2 0.01 2 3 5 7 0.1 2 3 5 7 1.0 2 3 5 7 10 2 ITR06812 0.1 7 5 3 0.01 2 3 5 7 0.1 2 3 Ta= 120 C 25C --40C C 120 Ta= C 25 C 40 -- Collector Current, IC - A Collector Current, IC - A 5 7 1.0 2 3 5 7 10 2 ITR06813 No.2854-2/4 2SC4423 10 7 VBE(sat) -- IC IC / IB=5 10 7 SW Time -- IC tstg Base-to-Emitter Saturation Voltage, VBE (sat) - V 5 3 2 Switching Time, SW Time - s 5 3 2 1.0 7 5 3 2 0.1 7 5 VCC=200V IC=5IB1= --2.5IB2 R load 1.0 7 5 3 2 0.01 2 3 Ta= --40C 25C 120C ton tf 5 7 0.1 2 3 Collector Current, IC - A 5 7 1.0 2 3 5 7 10 2 ITR06814 5 3 2 7 0.1 2 3 5 Collector Current, IC - A 7 1.0 2 3 5 7 2 10 ITR06815 100 5 3 2 10 5 3 2 Forward Bias A S O ICP=25A <50s DC Reverse Bias A S O ICP=25A Tc=25C IB2= --2.4A Const L=100H Collector Current, IC - A 10 op Collector Current, IC - A 7 1000 IC=12A m era Di lim ssipa tion ite tion d s 10 7 5 3 2 10 1m s 0 s 1.0 5 3 2 1.0 7 5 3 2 0.1 S/ B lim 0.1 5 3 2 ite d Tc=25C Single pulse 3 5 7 10 2 3 5 7 100 2 3 5 5 7 Collector-to-Emitter Voltage, VCE - V ITR06816 Collector-to-Emitter Sustain Voltage, VCE(sus) - V 60 100 2 3 5 7 1000 Transient Thermal Resistance, Rth(t) - C/W 5 3 Rth(t) -- t Tc=25C PC -- Ta ITR06817 1.0 7 5 3 2 Collector Dissipation, PC - W 2 50 40 30 20 0.1 7 5 3 2 0.1 23 5 1.0 23 5 10 23 5 100 23 5 1000 ITR06818 10 3 0 0 20 40 No heat sink 60 80 100 120 140 160 Time, t - ms Ambient Temperature, Ta - C ITR06819 No.2854-3/4 2SC4423 Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be expor ted without obtaining the expor t license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of January, 2004. Specifications and information herein are subject to change without notice. PS No.2854-4/4 |
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